2N4400
2N4401
SILICON
NPN TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4400 and
2N4401 are silicon NPN transistors designed for
general purpose amplifier and switching applications.
PNP complementary types are 2N4402 and 2N4403.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
ELECTRICAL
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hfe
fT
Cob
Cib
ton
toff
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
CHARACTERISTICS: (TA=25°C)
TEST CONDITIONS
VCE=35V, VEB=0.4V
IC=0.1mA
IC=1.0mA
IE=0.1mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=150mA
VCE=2.0V, IC=500mA
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=20mA, f=100MHz
VCB=5.0V, IE=0, f=100kHz
VBE=0.5V, IC=0, f=100kHz
VCC=30V, VEB(OFF)=2.0V, IC=150mA,
IB1=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
UNITS
V
V
V
mA
mW
°C
60
40
6.0
600
625
-65 to +150
2N4400
MIN
MAX
100
60
40
6.0
0.40
0.75
0.75
0.95
1.2
20
-
2N4401
MIN
MAX
100
60
40
6.0
0.40
0.75
0.75
0.95
1.2
20
40
-
40
50
20
20
200
-
150
250
6.5
30
80
100
40
40
250
-
300
500
6.5
30
MHz
pF
pF
-
35
255
-
35
255
ns
ns
UNITS
nA
V
V
V
V
V
V
V
R2 (2-December 2014)
2N4400
2N4401
SILICON
NPN TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R2 (2-December 2014)
w w w. c e n t r a l s e m i . c o m
2N4400
2N4401
SILICON
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (2-December 2014)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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